Monday, 11 February 2013

Volume 10.04 Electronics



Section 10 - Electrical Insulation and Electronics
Volume 10.04, April 2005
Electronics

E1392 Practice for Angle Resolved Optical Scatter Measurements on Specular or Diffuse Surfaces

F0001-03 Specification for Nickel-Clad and Nickel-Plated Steel Strip for Electron Tubes

F0003-02A Specification for Nickel Strip for Electron Tubes

F0004-66R05 Specification for Carbonized Nickel Strip and Carbonized Nickel-Plated and Nickel-Clad Steel Strip for Electron Tubes

F0007-95R00 Specification for Aluminum Oxide Powder\t

F0015-04 Specification for Iron-Nickel-Cobalt Sealing Alloy

F0016-67R00 Test Methods for Measuring Diameter or Thickness of Wire and Ribbon for Electronic Devices and Lamps

F0018-64R00 Specification and Test Method for Evaluation of Glass-to-Metal Headers Used in Electron Devices

F0019-64R05E01 Test Method for Tension and Vacuum Testing Metallized Ceramic Seals

F0026 Test Methods for Determining the Orientation of a Semiconductive Single Crystal

F0028 Test Methods for Minority-Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photoconductivity Decay

F0029-97R02 Specification for Dumet Wire for Glass-to-Metal Seal Applications

F0030-96R02 Specification for Iron-Nickel Sealing Alloys

F0031-05 Specification for 42 \% Nickel-6 \% Chromium-Iron Sealing Alloy

F0042 Test Methods for Conductivity Type of Extrinsic Semiconducting Materials

F0043 Test Methods for Resistivity of Semiconductor Materials

F0044-95R00 Specification for Metallized Surfaces on Ceramic

F0072-95R01 Specification for Gold Wire for Semiconductor Lead Bonding

F0073-96R02 Specification for Tungsten-Rhenium Alloy Wire for Electron Devices and Lamps

F0076-86R02 Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors

F0078-97R02 Test Method for Calibration of Helium Leak Detectors by Use of Secondary Standards

F0081 Test Method for Measuring Radial Resistivity Variation on Silicon Wafers

F0083-71R02 Practice for Definition and Determination of Thermionic Constants of Electron Emitters

F0084 Test Method for Measuring Resistivity of Silicon Wafers With an In-Line Four-Point Probe

F0085-76R02 Practice for Nomenclature for Wire Leads Used as Conductors in Electron Tubes

F0095 Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer

F0096-77R05 Specification for Electronic Grade Alloys of Copper and Nickel in Wrought Forms

F0097-72R02E01 Practices for Determining Hermeticity of Electron Devices by Dye Penetration

F0106-00 Specification for Brazing Filler Metals for Electron Devices

F0110 Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique

F0111-96R02 Practice for Determining Barium Yield, Getter Gas Content, and Getter Sorption Capacity for Barium Flash Getters

F0154 Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces

F0180-94R05 Test Method for Density of Fine Wire and Ribbon Wire for Electronic Devices

F0204-76R02 Test Method for Surface Flaws in Tungsten Seal Rod and Wire

F0205-94R05 Test Method for Measuring Diameter of Fine Wire by Weighing

F0219-96R02 Test Methods of Testing Fine Round and Flat Wire for Electron Devices and Lamps

F0256-05 Specification for Chromium-Iron Sealing Alloys with 18 or 28 Percent Chromium

F0269-60R02 Test Method for Sag of Tungsten Wire

F0288-96R02 Specification for Tungsten Wire for Electron Devices and Lamps

F0289-96R02 Specification for Molybdenum Wire and Rod for Electronic Applications

F0290-94R05 Specification for Round Wire for Winding Electron Tube Grid Laterals

F0357-78R02 Practice for Determining Solderability of Thick Film Conductors\t

F0358-83R02 Test Method for Wavelength of Peak Photoluminescence and the Corresponding Composition of Gallium Arsenide Phosphide Wafers\t

F0364-96R02 Specification for Molybdenum Flattened Wire for Electron Tubes

F0374 Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure

F0375-89R05 Specification for Integrated Circuit Lead Frame Material

F0390-98R03 Test Method for Sheet Resistance of Thin Metallic Films With a Collinear Four-Probe Array

F0391 Test Methods for Minority Carrier Diffusion Length in Extrinsic Semiconductors by Measurement of Steady-State Surface Photovoltage

F0397 Test Method for Resistivity of Silicon Bars Using a Two-Point Probe

F0398 Test Method for Majority Carrier Concentration in Semiconductors by Measurement of Wavenumber or Wavelength of the Plasma Resonance Minimum

F0418-77R02 Practice for Preparation of Samples of the Constant Composition Region of Epitaxial Gallium Arsenide Phosphide for Hall Effect Measurements

F0448-99R05 Test Method for Measuring Steady-State Primary Photocurrent

F0458-84R01 Practice for Nondestructive Pull Testing of Wire Bonds

F0459-84R01 Test Methods for Measuring Pull Strength of Microelectronic Wire Bonds

F0487-88R01 Specification for Fine Aluminum\N1 \% Silicon Wire for Semiconductor Lead-Bonding

F0508-77R02 Practice for Specifying Thick-Film Pastes\t

F0523 Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces

F0525 Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe

F0526-97R03 Test Method for Measuring Dose for Use in Linear Accelerator Pulsed Radiation Effects Tests

F0528-99R05 Test Method of Measurement of Common-Emitter DC Current Gain of Junction Transistors

F0533 Test Method for Thickness and Thickness Variation of Silicon Wafers

F0534 Test Method for Bow of Silicon Wafers

F0576 Test Method for Measurement of Insulator Thickness and Refractive Index on Silicon Substrates by Ellipsometry

F0584-87R99 Practice for Visual Inspection of Semiconductor Lead-Bonding Wire

F0615M-95R02 Practice for Determining Safe Current Pulse-Operating Regions for Metallization on Semiconductor Components \[Metric\]

F0616M-96R03 Test Method for Measuring MOSFET Drain Leakage Current \[Metric\]

F0617-00 Test Method for Measuring MOSFET Linear Threshold Voltage

F0637-85R01 Specification for Format, Physical Properties, and Test Methods for 19 and 35 mm Testable Tape Carrier for Perimeter Tape Carrier-Bonded Semiconductor Devices

F0638-88R01 Specification for Fine Aluminum\M1 \% Magnesium Wire for Semiconductor Lead-Bonding

F0657 Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact Scanning

F0671 Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic Materials

F0672 Test Method for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe

F0673 Test Methods for Measuring Resistivity of Semiconductor Slices or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gage

F0674 Practice for Preparing Silicon for Spreading Resistance Measurements

F0676-97R03 Test Method for Measuring Unsaturated TTL Sink Current

F0692-97R02 Test Method for Measuring Adhesion Strength of Solderable Films to Substrates

F0723 Practice for Conversion Between Resistivity and Dopant Density for Boron-Doped, Phosphorus-Doped, and Arsenic-Doped Silicon

F0728 Practice for Preparing An Optical Microscope for Dimensional Measurements

F0744M-97R03 Test Method for Measuring Dose Rate Threshold for Upset of Digital Integrated Circuits \[Metric\]

F0769-00 Test Method for Measuring Transistor and Diode Leakage Currents

F0773M-96R03 Practice for Measuring Dose Rate Response of Linear Integrated Circuits \[Metric\]

F0798-97R02 Practice for Determining Gettering Rate, Sorption Capacity, and Gas Content of Nonevaporable Getters in the Molecular Flow Region\t

F0816-83R03 Test Method for Combined Fine and Gross Leaks for Large Hybrid Microcircuit Packages

F0847 Test Methods for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques

F0928 Test Methods for Edge Contour of Circular Semiconductor Wafers and Rigid Disk Substrates

F0950 Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Slice Surface by Angle Polishing and Defect Etching

F0951 Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers

F0978 Test Method for Characterizing Semiconductor Deep Levels by Transient Capacitance Techniques

F0979-86R03 Test Method for Hermeticity of Hybrid Microcircuit Packages Prior to Lidding

F0980M-96R03 Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices \[Metric\]

F0996-98R03 Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current\NVoltage Characteristics

F1048 Test Method for Measuring the Effective Surface Roughness of Optical Components by Total Integrated Scattering

F1049 Practice for Shallow Etch Pit Detection on Silicon Wafers

F1094-87R05 Test Methods for Microbiological Monitoring of Water Used for Processing Electron and Microelectronic Devices by Direct Pressure Tap Sampling Valve and by the Presterilized Plastic Bag Method

F1152 Test Method for Dimensions of Notches on Silicon Wafers

F1153 Test Method for Characterization of Metal-Oxide-Silicon (MOS) Structures by Capacitance-Voltage Measurements

F1188 Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption with Short Baseline

F1190-99R05 Guide for Neutron Irradiation of Unbiased Electronic Components

F1192-00 Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices

F1211-89R01 Specification for Semiconductor Device Passivation Opening Layouts

F1212-89R02 Test Method for Thermal Stability Testing of Gallium Arsenide Wafers

F1238-95R03 Specification for Refractory Silicide Sputtering Targets for Microelectronic Applications

F1239 Test Method for Oxygen Precipitation Characteristics of Silicon Wafers by Measurement of Interstitial Oxygen Reduction

F1241 Terminology of Silicon Technology

F1259M-96R03 Guide for Design of Flat, Straight-Line Test Structures for Detecting Metallization Open-Circuit or Resistance-Increase Failure Due to Electromigration \[Metric\]

F1260M-96R03 Test Method for Estimating Electromigration Median Time-To-Failure and Sigma of Integrated Circuit Metallizations \[Metric\]

F1261M-96R03 Test Method for Determining the Average Electrical Width of a Straight, Thin-Film Metal Line \[Metric\]

F1262M-95R02 Guide for Transient Radiation Upset Threshold Testing of Digital Integrated Circuits [Metric]

F1263-99R05 Guide for Analysis of Overtest Data in Radiation Testing of Electronic Parts

F1269-89R01 Test Methods for Destructive Shear Testing of Ball Bonds

F1366 Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry

F1367-98R03 Specification for Chromium Sputtering Targets for Thin Film Applications

F1372-93R05 Test Method for Scanning Electron Microscope (SEM) Analysis of Metallic Surface Condition for Gas Distribution System Components

F1373-93R05 Test Method for Determination of Cycle Life of Automatic Valves for Gas Distribution System Components

F1374-92R05 Test Method for Ionic/Organic Extractables of Internal Surfaces-IC/GC/FTIR for Gas Distribution System Components

F1375-92R05 Test Method for Energy Dispersive X-Ray Spectrometer (EDX) Analysis of Metallic Surface Condition for Gas Distribution System Components

F1376-92R05 Guide for Metallurgical Analysis for Gas Distribution System Components

F1388 Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors

F1389 Test Methods for Photoluminescence Analysis of Single Crystal Silicon for III-V Impurities

F1390 Test Method for Measuring Warp on Silicon Wafers by Automated Noncontact Scanning

F1391 Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption

F1392 Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements With a Mercury Probe

F1393 Test Method for Determining Net Carrier Density in Silicon Wafers by Miller Feedback Profiler Measurements With a Mercury Probe

F1394-92R05 Test Method for Determination of Particle Contribution from Gas Distribution System Valves

F1396-93R05 Test Method for Determination of Oxygen Contribution by Gas Distribution System Components

F1397-93R05 Test Method for Determination of Moisture Contribution by Gas Distribution System Components

F1398-93R05 Test Method for Determination of Total Hydrocarbon Contribution by Gas Distribution System Components

F1404-92R99 Test Method for Crystallographic Perfection of Gallium Arsenide by Molten Potassium Hydroxide (KOH) Etch Technique

F1438-93R05 Test Method for Determination of Surface Roughness by Scanning Tunneling Microscopy for Gas Distribution System Components

F1451 Test Method for Measuring Sori on Silicon Wafers by Automated Noncontact Scanning

F1466-99R05 Specification for Iron-Nickel-Cobalt Alloys for Metal-to-Ceramic Sealing Applications

F1467-99R05 Guide for Use of an X-Ray Tester (|mF10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits

F1512-94R03 Practice for Ultrasonic C-Scan Bond Evaluation of Sputtering Target-Backing Plate Assemblies

F1513-99R03 Specification for Pure Aluminum (Unalloyed) Source Material for Electronic Thin Film Applications

F1526 Test Method for Measuring Surface Metal Contamination on Silicon Wafers by Total Reflection X-Ray Fluorescence Spectroscopy

F1527 Guide for Application of Certified Reference Materials and Reference Wafers for Calibration and Control of Instruments for Measuring Resistivity of Silicon

F1528 Test Method for Measuring Boron Contamination in Heavily Doped -Type Silicon Substrates by Secondary Ion Mass Spectrometry

F1529 Test Method for Sheet Resistance Uniformity Evaluation by In-Line Four-Point Probe with the Dual-Configuration Procedure

F1530 Test Method for Measuring Flatness, Thickness, and Thickness Variation on Silicon Wafers by Automated Noncontact Scanning

F1535 Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance

F1569 Guide for Generation of Consensus Reference Materials for Semiconductor Technology

F1570-01E01 Test Method for Determining the Tactile Ratio of a Membrane Switch

F1578-01 Practice for Contact Closure Cycling of a Membrane Switch

F1593-97R02 Test Method for Trace Metallic Impurities in Electronic Grade Aluminum by High Mass-Resolution Glow-Discharge Mass Spectrometer

F1594-95R03 Specification for Pure Aluminum (Unalloyed) Source Material for Vacuum Coating Applications

F1595-00 Practice for Viewing Conditions for Visual Inspection of Membrane Switches

F1596-00 Practice for Exposure of Membrane Switches to Temperature and Relative Humidity

F1597-02 Test Method for Determining the Actuation Force and Contact Force of a Membrane Switch

F1598-95R02 Test Method for Determining the Effects of Chemical/Solvent Exposure to a Membrane Switch/Graphic Overlay (Spot Test Method)

F1617 Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and EPI Substrates by Secondary Ion Mass Spectrometry

F1618 Practice for Determination of Uniformity of Thin Films on Silicon Wafers

F1619 Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with -Polarized Radiation Incident at the Brewster Angle

F1620 Practice for Calibrating a Scanning Surface Inspection System Using Monodisperse Polystyrene Latex Spheres Deposited on Polished or Epitaxial Wafer Surfaces

F1621 Practice for Determining the Positional Accuracy Capabilities of a Scanning Surface Inspection System

F1630 Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities

F1661-96R02 Test Method for Determining the Contact Bounce Time of a Membrane Switch

F1662-04 Test Method for Verifying the Specified Dielectric Withstand Voltage and Determining the Dielectric Breakdown Voltage of a Membrane Switch

F1663-95R02 Test Method for Determining the Capacitance of a Membrane Switch

F1680-02 Test Method for Determining Circuit Resistance of a Membrane Switch

F1681-96R02 Test Method for Determining Current Carrying Capacity of a Conductor as Part of a Membrane Switch Circuit

F1682-02 Test Method for Determining Travel of a Membrane Switch

F1683-02 Practice for Creasing or Bending a Membrane Switch, Membrane Switch Flex Tail Assembly or Membrane Switch Component

F1684-99R05E01 Specification for Iron-Nickel and Iron-Nickel-Cobalt Alloys for Low Thermal Expansion Applications

F1689-02 Test Method for Determining the Insulation Resistance of a Membrane Switch

F1708 Practice for Evaluation of Granular Polysilicon by Melter-Zoner Spectroscopies

F1709-97R02 Specification for High Purity Titanium Sputtering Targets for Electronic Thin Film Applications

F1710-97R02 Test Method for Trace Metallic Impurities in Electronic Grade Titanium by High Mass-Resolution Glow Discharge Mass Spectrometer

F1711-96R02 Practice for Measuring Sheet Resistance of Thin Film Conductors for Flat Panel Display Manufacturing Using a Four-Point Probe Method

F1723 Practice for Evaluation of Polycrystalline Silicon Rods by Float-Zone Crystal Growth and Spectroscopy

F1724 Test Method for Measuring Surface Metal Contamination of Polycrystalline Silicon by Acid Extraction-Atomic Absorption Spectroscopy

F1725 Guide for Analysis of Crystallographic Perfection of Silicon Ingots

F1726 Guide for Analysis of Crystallographic Perfection of Silicon Wafers

F1727 Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers

F1761-00 Test Method for Pass Through Flux of Circular Magnetic Sputtering Targets

F1762-02 Practice for Exposing a Membrane Switch to Variation in Atmospheric Pressure

F1763 Test Methods for Measuring Contrast of a Linear Polarizer

F1771 Test Method for Evaluating Gate Oxide Integrity by Voltage Ramp Technique

F1809 Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon

F1810 Test Method for Counting Preferentially Etched or Decorated Surface Defects in Silicon Wafers

F1811 Practice for Estimating the Power Spectral Density Function and Related Finish Parameters from Surface Profile Data

F1812-02 Test Method for Determining the Effectiveness of Membrane Switch ESD Shielding

F1842-02 Test Method for Determining Ink or Coating Adhesion on Plastic Substrates for Membrane Switch Applications

F1843-97R02 Practice for Sample Preparation of Transparent Plastic Films for Specular Gloss Measurements, on Membrane Switch Overlays

F1844-97R02 Practice for Measuring Sheet Resistance of Thin Film Conductors For Flat Panel Display Manufacturing Using a Noncontact Eddy Current Gage

F1845-97R02 Test Method for Trace Metallic Impurities in Electronic Grade Aluminum-Copper, Aluminum-Silicon, and Aluminum-Copper-Silicon Alloys by High-Mass-Resolution Glow Discharge Mass Spectrometer

F1892-04 Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices

F1893-98R03 Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices

F1894-98R03 Test Method for Quantifying Tungsten Silicide Semiconductor Process Films for Composition and Thickness

F1895-98R04 Practice for Submersion of a Membrane Switch

F1896-98R04 Test Method for Determining the Electrical Resistivity of a Printed Conductive Material

F1982 Test Methods for Analyzing Organic Contaminants on Silicon Wafer Surfaces by Thermal Desorption Gas Chromatography

F1995-00 Test Method for Determining the Bond Strength of a Surface Mount Device (SMD) on a Membrane Switch by Applying Shear Force

F1996-01 Test Method for Silver Migration for Membrane Switch Circuitry

F1997-99R05 Test Method for Determining the Sensitivity (Teasing) of a Tactile Membrane Switch

F2072-01 Practice for Hosedown of a Membrane Switch

F2073-01 Test Method for Non-Destructive Short Circuit Testing of a Membrane Switch

F2074 Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers

F2086-01 Test Method for Pass Through Flux of Circular Magnetic Sputtering Targets, Method 2

F2112-02 Terminology for Membrane Switches

F2113-01E01 Guide for Analysis and Reporting the Impurity Content and Grade of High Purity Metallic Sputtering Targets for Electronic Thin Film Applications

F2114-02 Guide for ASTM Standard Test Methods, Standard Practices, and Typical Values of a Membrane Switch

F2139 Test Method for Measuring Nitrogen Concentration in Silicon Substrates by Secondary Ion Mass Spectrometry

F2166 Practices for Monitoring Non-Contact Dielectric Characterization Systems Through Use of Special Reference Wafers

F2187-02 Test Method for Determining the Effect of Random Frequency Vibration on a Membrane Switch or Membrane Switch Assembly

F2188-02 Test Method for Determining the Effect of Variable Frequency Vibration on a Membrane Switch or Membrane Switch Assembly

F2357-04 Test Method for Determining the Abrasion Resistance of Inks and Coatings on Membrane Switches Using the Norman Tool |P`RCA|P' Abrader

F2358-04 Guide for Measuring Characteristics of Sapphire Substrates

F2359-04 Test Method for Determining Color of a Membrane Switch Backlit with Diffuse Light Source

F2360-04 Test Method for Determining Luminance of a Membrane Switch Backlit with Diffuse Light Source

F2405-04 Test Method for Trace Metallic Impurities in High Purity Copper by High-Mass-Resolution Glow Discharge Mass Spectrometer

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